IRFIZ34GPBF Specs and Replacement
Type Designator: IRFIZ34GPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220F
IRFIZ34GPBF substitution
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IRFIZ34GPBF datasheet
irfiz34g irfiz34gpbf.pdf
IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T... See More ⇒
irfiz34gpbf.pdf
PD - 94861 IRFIZ34GPbF Lead-Free 12/03/03 Document Number 91188 www.vishay.com 1 IRFIZ34GPbF Document Number 91188 www.vishay.com 2 IRFIZ34GPbF Document Number 91188 www.vishay.com 3 IRFIZ34GPbF Document Number 91188 www.vishay.com 4 IRFIZ34GPbF Document Number 91188 www.vishay.com 5 IRFIZ34GPbF Document Number 91188 www.vishay.com 6 IRFIZ34GPbF TO-220 Full... See More ⇒
irfiz34g sihfiz34g.pdf
IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T... See More ⇒
Detailed specifications: IRFNL210BTAFP001, IRFIZ14G, IRFIZ14GPBF, IRFIZ24EPBF, IRFIZ24G, IRFIZ24GPBF, IRFIZ24NPBF, IRFIZ34G, AON6380, IRFIZ34NPBF, IRFIZ44G, IRFIZ44GPBF, IRFIZ44NPBF, IRFIZ46NPBF, IRFIZ48G, IRFIZ48GPBF, IRFIZ48NPBF
Keywords - IRFIZ34GPBF MOSFET specs
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