IRFB7446G Todos los transistores

 

IRFB7446G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB7446G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 99 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 123 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 475 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: TO220AB
 

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IRFB7446G Datasheet (PDF)

 ..1. Size:541K  international rectifier
 irfb7446g.pdf pdf_icon

IRFB7446G

StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power sup

 6.1. Size:543K  international rectifier
 irfb7446pbf.pdf pdf_icon

IRFB7446G

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 6.2. Size:543K  international rectifier
 irfb7446.pdf pdf_icon

IRFB7446G

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 6.3. Size:245K  inchange semiconductor
 irfb7446.pdf pdf_icon

IRFB7446G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7446IIRFB7446FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

MOSTRAR MÁS

Otros transistores... IRFIZ48GPBF , IRFIZ48NPBF , IRFIZ48VPBF , IRFB7430 , IRFB7434 , IRFB7437 , IRFB7440 , IRFB7446 , 13N50 , IRFB7530 , IRFB7534 , IRFB7537 , IRFB7540 , IRFB7545 , IRFB7546 , IRFB7730 , IRFB7734 .

 

 
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