All MOSFET. IRFB7446G Datasheet

 

IRFB7446G Datasheet and Replacement


   Type Designator: IRFB7446G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 99 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 123 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO220AB
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IRFB7446G Datasheet (PDF)

 ..1. Size:541K  international rectifier
 irfb7446g.pdf pdf_icon

IRFB7446G

StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power sup

 6.1. Size:543K  international rectifier
 irfb7446pbf.pdf pdf_icon

IRFB7446G

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 6.2. Size:543K  international rectifier
 irfb7446.pdf pdf_icon

IRFB7446G

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 6.3. Size:245K  inchange semiconductor
 irfb7446.pdf pdf_icon

IRFB7446G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7446IIRFB7446FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

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Keywords - IRFB7446G MOSFET datasheet

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