IRFR1018EPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR1018EPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
   Paquete / Cubierta: TO252

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IRFR1018EPBF Datasheet (PDF)

..1. Size:368K international rectifier
irfr1018epbf irfu1018epbf.pdf

PD - 97129AIRFR1018EPbFIRFU1018EPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPS D VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingmax. 8.4m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)79A cID (Package Limited)S 56A Benefitsl Improved Gate, Avalanche and Dyna

..2. Size:368K infineon
irfr1018epbf irfu1018epbf.pdf

5.1. Size:619K infineon
auirfr1018e.pdf

AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu

5.2. Size:242K inchange semiconductor
irfr1018e.pdf

isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018EFEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

7.1. Size:328K international rectifier
irfr1010zpbf irfu1010zpbf.pdf

PD - 95951AIRFR1010ZPbFIRFU1010ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 7.5mG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

7.2. Size:242K international rectifier
auirfr1010z.pdf

PD - 97683AUTOMOTIVE GRADEAUIRFR1010ZHEXFET Power MOSFETFeaturesDVDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ.5.8m 175C Operating Temperature max. 7.5mG Fast SwitchingID (Silicon Limited) 91A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)S 42A Lead-Free, RoHS Compliant Automotive Qualifie

7.3. Size:328K infineon
irfr1010zpbf irfu1010zpbf.pdf

7.4. Size:241K inchange semiconductor
irfr1010z.pdf

isc N-Channel MOSFET Transistor IRFR1010Z, IIRFR1010ZFEATURESStatic drain-source on-resistance:RDS(on)7.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Ga

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