IRFR1018EPBF MOSFET Datasheet: N-Ch, 60V, 56A. Full specification with pinout and replacement list

IRFR1018EPBF Specs and Replacement

Type Designator: IRFR1018EPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 270 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: TO252

IRFR1018EPBF substitution

- MOSFET ⓘ Cross-Reference Search

IRFR1018EPBF datasheet

..1. Size:368K international rectifier
irfr1018epbf irfu1018epbf.pdf pdf_icon

PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching max. 8.4m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 79A c ID (Package Limited) S 56A Benefits l Improved Gate, Avalanche and Dyna... See More ⇒

5.1. Size:619K infineon
auirfr1018e.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175 C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu... See More ⇒

5.2. Size:242K inchange semiconductor
irfr1018e.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018E FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 ... See More ⇒

7.1. Size:328K international rectifier
irfr1010zpbf irfu1010zpbf.pdf pdf_icon

PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 7.5m G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re... See More ⇒