IRFR120ZPBF Todos los transistores

 

IRFR120ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR120ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 6.9 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO252
 

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IRFR120ZPBF Datasheet (PDF)

 ..1. Size:318K  international rectifier
 irfr120zpbf irfu120zpbf.pdf pdf_icon

IRFR120ZPBF

PD - 95772BIRFR120ZPbFIRFU120ZPbFHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 190m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 8.7ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-r

 6.1. Size:309K  international rectifier
 auirfu120z auirfr120z.pdf pdf_icon

IRFR120ZPBF

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

 6.2. Size:309K  international rectifier
 auirfr120ztrl.pdf pdf_icon

IRFR120ZPBF

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

 6.3. Size:241K  inchange semiconductor
 irfr120z.pdf pdf_icon

IRFR120ZPBF

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120ZFEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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