All MOSFET. IRFR120ZPBF Datasheet

 

IRFR120ZPBF Datasheet and Replacement


   Type Designator: IRFR120ZPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 6.9 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO252
 

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IRFR120ZPBF Datasheet (PDF)

 ..1. Size:318K  international rectifier
 irfr120zpbf irfu120zpbf.pdf pdf_icon

IRFR120ZPBF

PD - 95772BIRFR120ZPbFIRFU120ZPbFHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 190m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 8.7ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-r

 6.1. Size:309K  international rectifier
 auirfu120z auirfr120z.pdf pdf_icon

IRFR120ZPBF

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

 6.2. Size:309K  international rectifier
 auirfr120ztrl.pdf pdf_icon

IRFR120ZPBF

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

 6.3. Size:241K  inchange semiconductor
 irfr120z.pdf pdf_icon

IRFR120ZPBF

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120ZFEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

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Keywords - IRFR120ZPBF MOSFET datasheet

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