IRFP054PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP054PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 160 nS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO247AC

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IRFP054PBF datasheet

 ..1. Size:1562K  vishay
irfp054pbf sihfp054.pdf pdf_icon

IRFP054PBF

IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.014 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 160 Fast Switching Qgs (nC) 48 Ease of Paralleling Qgd (nC) 54 Simple Drive Requirements Configuration Single Com

 ..2. Size:212K  inchange semiconductor
irfp054pbf.pdf pdf_icon

IRFP054PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP054PBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching Simple drive requirements 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 7.1. Size:216K  international rectifier
irfp054v.pdf pdf_icon

IRFP054PBF

PD - 94110 IRFP054V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 9.0m G Fast Switching Fully Avalanche Rated ID = 93A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 7.2. Size:109K  international rectifier
irfp054n.pdf pdf_icon

IRFP054PBF

PD - 9.1382A IRFP054N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben

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