IRFP054PBF MOSFET Datasheet: N-Ch, 60V, 70A. Full specification with pinout and replacement list

IRFP054PBF Specs and Replacement

Type Designator: IRFP054PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 2000 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO247AC

IRFP054PBF substitution

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IRFP054PBF datasheet

..1. Size:1562K vishay
irfp054pbf sihfp054.pdf pdf_icon

IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.014 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 160 Fast Switching Qgs (nC) 48 Ease of Paralleling Qgd (nC) 54 Simple Drive Requirements Configuration Single Com... See More ⇒

..2. Size:212K inchange semiconductor
irfp054pbf.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP054PBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching Simple drive requirements 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒

7.1. Size:216K international rectifier
irfp054v.pdf pdf_icon

PD - 94110 IRFP054V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 9.0m G Fast Switching Fully Avalanche Rated ID = 93A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ... See More ⇒

7.2. Size:109K international rectifier
irfp054n.pdf pdf_icon

PD - 9.1382A IRFP054N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben... See More ⇒