All MOSFET. IRFP054PBF Datasheet

 

IRFP054PBF Datasheet and Replacement


   Type Designator: IRFP054PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO247AC
 

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IRFP054PBF Datasheet (PDF)

 ..1. Size:1562K  vishay
irfp054pbf sihfp054.pdf pdf_icon

IRFP054PBF

IRFP054, SiHFP054Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.014RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 160 Fast SwitchingQgs (nC) 48 Ease of ParallelingQgd (nC) 54 Simple Drive RequirementsConfiguration Single Com

 ..2. Size:212K  inchange semiconductor
irfp054pbf.pdf pdf_icon

IRFP054PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP054PBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switchingSimple drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 7.1. Size:216K  international rectifier
irfp054v.pdf pdf_icon

IRFP054PBF

PD - 94110IRFP054VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 9.0mG Fast Switching Fully Avalanche RatedID = 93A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

 7.2. Size:109K  international rectifier
irfp054n.pdf pdf_icon

IRFP054PBF

PD - 9.1382AIRFP054NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This ben

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History: STH7NA60FI

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