IRFP054PBF - описание и поиск аналогов

 

Аналоги IRFP054PBF. Основные параметры


   Наименование производителя: IRFP054PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 160 ns
   Cossⓘ - Выходная емкость: 2000 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO247AC
 

 Аналог (замена) для IRFP054PBF

   - подбор ⓘ MOSFET транзистора по параметрам

 

IRFP054PBF даташит

 ..1. Size:1562K  vishay
irfp054pbf sihfp054.pdfpdf_icon

IRFP054PBF

IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.014 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 160 Fast Switching Qgs (nC) 48 Ease of Paralleling Qgd (nC) 54 Simple Drive Requirements Configuration Single Com

 ..2. Size:212K  inchange semiconductor
irfp054pbf.pdfpdf_icon

IRFP054PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP054PBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching Simple drive requirements 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 7.1. Size:216K  international rectifier
irfp054v.pdfpdf_icon

IRFP054PBF

PD - 94110 IRFP054V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 9.0m G Fast Switching Fully Avalanche Rated ID = 93A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 7.2. Size:109K  international rectifier
irfp054n.pdfpdf_icon

IRFP054PBF

PD - 9.1382A IRFP054N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben

Другие MOSFET... IRFR13N15DPBF , IRFR13N20DPBF , IRFP044NPBF , IRFP044PBF , IRFP048NPBF , IRFP048PBF , IRFP048R , IRFP054NPBF , IRFZ44N , IRFP064NPBF , IRFP064VPBF , IRFP1405PBF , IRFP140PBF , IRFP150MPBF , IRFP150NPBF , IRFP150PBF , IRFP15N60L .

 

 

 


 
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