IRFP3077PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP3077PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 340 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 87 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm

Encapsulados: TO247AC

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IRFP3077PBF datasheet

 ..1. Size:299K  international rectifier
 irfp3077pbf.pdf pdf_icon

IRFP3077PBF

PD - 97126 IRFP3077PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-247 ID (Silicon Limited) 200A c l Improved Gate, Avalanche and Dynamic dV/d

 6.1. Size:242K  inchange semiconductor
 irfp3077.pdf pdf_icon

IRFP3077PBF

isc N-Channel MOSFET Transistor IRFP3077 IIRFP3077 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc

 8.1. Size:361K  international rectifier
 irfp3006.pdf pdf_icon

IRFP3077PBF

IRFP3006PbF VDSS 60V D RDS(on) typ. 2.1m max. 2.5m S G D 270A ID (Silicon Limited) G ID (Package Limited) 195A S TO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved

 8.2. Size:243K  inchange semiconductor
 irfp3006.pdf pdf_icon

IRFP3077PBF

isc N-Channel MOSFET Transistor IRFP3006 IIRFP3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Swit

MOSTRAR MÁS

Otros transistores... IRFP264PBF, IRFP26N60L, IRFP26N60LPBF, IRFP27N60K, IRFP27N60KPBF, IRFP2907PBF, IRFP2907ZPBF, IRFP3006, AON7410, IRFP31N50L, IRFP31N50LPBF, IRFP3206PBF, IRFP32N50K, IRFP32N50KPBF, IRFP3306PBF, IRFP340PBF, IXZR18N50B