Справочник MOSFET. IRFP3077PBF

 

IRFP3077PBF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IRFP3077PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 340 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 87 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO247AC
     - подбор MOSFET транзистора по параметрам

 

IRFP3077PBF Datasheet (PDF)

 ..1. Size:299K  international rectifier
irfp3077pbf.pdfpdf_icon

IRFP3077PBF

PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

 6.1. Size:242K  inchange semiconductor
irfp3077.pdfpdf_icon

IRFP3077PBF

isc N-Channel MOSFET Transistor IRFP3077IIRFP3077FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc

 8.1. Size:361K  international rectifier
irfp3006.pdfpdf_icon

IRFP3077PBF

IRFP3006PbF VDSS 60V DRDS(on) typ. 2.1m max. 2.5m S GD 270A ID (Silicon Limited) G ID (Package Limited) 195A STO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved

 8.2. Size:243K  inchange semiconductor
irfp3006.pdfpdf_icon

IRFP3077PBF

isc N-Channel MOSFET Transistor IRFP3006IIRFP3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SM3433NHQG | KI1N60 | RJK03F9DNS | IPL60R185P7 | SI4946BEY-T1 | BLP042N15J-B | ME08N20-G

 

 
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