All MOSFET. IRFP3077PBF Datasheet

 

IRFP3077PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP3077PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 340 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO247AC

 IRFP3077PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP3077PBF Datasheet (PDF)

 ..1. Size:299K  international rectifier
 irfp3077pbf.pdf

IRFP3077PBF IRFP3077PBF

PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

 ..2. Size:299K  infineon
 irfp3077pbf.pdf

IRFP3077PBF IRFP3077PBF

PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

 6.1. Size:242K  inchange semiconductor
 irfp3077.pdf

IRFP3077PBF IRFP3077PBF

isc N-Channel MOSFET Transistor IRFP3077IIRFP3077FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc

 8.1. Size:361K  international rectifier
 irfp3006.pdf

IRFP3077PBF IRFP3077PBF

IRFP3006PbF VDSS 60V DRDS(on) typ. 2.1m max. 2.5m S GD 270A ID (Silicon Limited) G ID (Package Limited) 195A STO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved

 8.2. Size:243K  inchange semiconductor
 irfp3006.pdf

IRFP3077PBF IRFP3077PBF

isc N-Channel MOSFET Transistor IRFP3006IIRFP3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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