IRFP31N50LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95051SMPS MOSFETIRFP31N50LPbFAppIicationsHEXFET Power MOSFET Trr typ.VDSS RDS(on) typ. ID 500V 0.15 170ns 31A Features and Benefits

IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

PD - 94081SMPS MOSFETIRFP31N50LApplications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power SupplyVDSS RDS(on) typ. ID High Speed Power Switching500V 0.15 31A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

iscN-Channel MOSFET Transistor IRFP31N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.18 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL