IRFP31N50LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP31N50LPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 460 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 31 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 115 nS

Cossⓘ - Capacitancia de salida: 553 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO247AC

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IRFP31N50LPBF datasheet

 ..1. Size:208K  international rectifier
 irfp31n50lpbf.pdf pdf_icon

IRFP31N50LPBF

PD - 95051 SMPS MOSFET IRFP31N50LPbF AppIications HEXFET Power MOSFET Trr typ. VDSS RDS(on) typ. ID 500V 0.15 170ns 31A Features and Benefits

 ..2. Size:192K  vishay
 irfp31n50l irfp31n50lpbf sihfp31n50l.pdf pdf_icon

IRFP31N50LPBF

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.1. Size:95K  international rectifier
 irfp31n50l.pdf pdf_icon

IRFP31N50LPBF

PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.15 31A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

 4.2. Size:188K  vishay
 irfp31n50l sihfp31n50l.pdf pdf_icon

IRFP31N50LPBF

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

MOSTRAR MÁS

Otros transistores... IRFP26N60LPBF, IRFP27N60K, IRFP27N60KPBF, IRFP2907PBF, IRFP2907ZPBF, IRFP3006, IRFP3077PBF, IRFP31N50L, 5N65, IRFP3206PBF, IRFP32N50K, IRFP32N50KPBF, IRFP3306PBF, IRFP340PBF, IXZR18N50B, IXZR18N50A, IXZR16N60B