Справочник MOSFET. IRFP31N50LPBF

 

IRFP31N50LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP31N50LPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 460 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 115 ns
   Cossⓘ - Выходная емкость: 553 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP31N50LPBF

 

 

IRFP31N50LPBF Datasheet (PDF)

 ..1. Size:208K  international rectifier
 irfp31n50lpbf.pdf

IRFP31N50LPBF IRFP31N50LPBF

PD - 95051SMPS MOSFETIRFP31N50LPbFAppIicationsHEXFET Power MOSFET Trr typ.VDSS RDS(on) typ. ID 500V 0.15 170ns 31A Features and Benefits

 ..2. Size:192K  vishay
 irfp31n50l irfp31n50lpbf sihfp31n50l.pdf

IRFP31N50LPBF IRFP31N50LPBF

IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.1. Size:95K  international rectifier
 irfp31n50l.pdf

IRFP31N50LPBF IRFP31N50LPBF

PD - 94081SMPS MOSFETIRFP31N50LApplications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power SupplyVDSS RDS(on) typ. ID High Speed Power Switching500V 0.15 31A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

 4.2. Size:188K  vishay
 irfp31n50l sihfp31n50l.pdf

IRFP31N50LPBF IRFP31N50LPBF

IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.3. Size:401K  inchange semiconductor
 irfp31n50l.pdf

IRFP31N50LPBF IRFP31N50LPBF

iscN-Channel MOSFET Transistor IRFP31N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.18 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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