All MOSFET. IRFP31N50LPBF Datasheet

 

IRFP31N50LPBF Datasheet and Replacement


   Type Designator: IRFP31N50LPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 210 nC
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 553 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO247AC
 
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IRFP31N50LPBF Datasheet (PDF)

 ..1. Size:208K  international rectifier
 irfp31n50lpbf.pdf pdf_icon

IRFP31N50LPBF

PD - 95051SMPS MOSFETIRFP31N50LPbFAppIicationsHEXFET Power MOSFET Trr typ.VDSS RDS(on) typ. ID 500V 0.15 170ns 31A Features and Benefits

 ..2. Size:192K  vishay
 irfp31n50l irfp31n50lpbf sihfp31n50l.pdf pdf_icon

IRFP31N50LPBF

IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.1. Size:95K  international rectifier
 irfp31n50l.pdf pdf_icon

IRFP31N50LPBF

PD - 94081SMPS MOSFETIRFP31N50LApplications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power SupplyVDSS RDS(on) typ. ID High Speed Power Switching500V 0.15 31A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

 4.2. Size:188K  vishay
 irfp31n50l sihfp31n50l.pdf pdf_icon

IRFP31N50LPBF

IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

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Datasheet: IRFP26N60LPBF , IRFP27N60K , IRFP27N60KPBF , IRFP2907PBF , IRFP2907ZPBF , IRFP3006 , IRFP3077PBF , IRFP31N50L , 4435 , IRFP3206PBF , IRFP32N50K , IRFP32N50KPBF , IRFP3306PBF , IRFP340PBF , IXZR18N50B , IXZR18N50A , IXZR16N60B .

Keywords - IRFP31N50LPBF MOSFET datasheet

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