IRFP31N50LPBF Datasheet PDF and Equivalents Search

 ..1. Size:208K  international rectifier
 irfp31n50lpbf.pdf

PD - 95051 SMPS MOSFET IRFP31N50LPbF AppIications HEXFET Power MOSFET Trr typ. VDSS RDS(on) typ. ID 500V 0.15 170ns 31A Features and Benefits ... See More ⇒

 ..2. Size:192K  vishay
 irfp31n50l irfp31n50lpbf sihfp31n50l.pdf

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒

 4.1. Size:95K  international rectifier
 irfp31n50l.pdf

PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.15 31A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize... See More ⇒

 4.2. Size:188K  vishay
 irfp31n50l sihfp31n50l.pdf

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒

 4.3. Size:401K  inchange semiconductor
 irfp31n50l.pdf

iscN-Channel MOSFET Transistor IRFP31N50L FEATURES Low drain-source on-resistance RDS(ON) =0.18 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒