IXTH80N65X2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH80N65X2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 890 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V

Qgⓘ - Carga de la puerta: 144 nC

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 5208 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO-247

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IXTH80N65X2 datasheet

 ..1. Size:113K  ixys
 ixth80n65x2.pdf pdf_icon

IXTH80N65X2

Advance Technical Information X2-Class VDSS = 650V IXTH80N65X2 Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings D S D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G = Gate D = Drain S = Source Tab = Drain VGSS Contin

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 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf pdf_icon

IXTH80N65X2

Advance Technical Information LinearL2TM Power VDSS = 75V IXTA80N075L2 MOSFETs w/Extended ID25 = 80A IXTP80N075L2 RDS(on) 24m FBSOA IXTH80N075L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 75 V VDGR TJ = 25

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 ixth7p50 ixth8p50.pdf pdf_icon

IXTH80N65X2

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w

 9.2. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTH80N65X2

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK)

MOSTRAR MÁS

Otros transistores... IXTK120N65X2, IXTK102N65X2, IXTJ6N150, IXTJ4N150, IXTJ3N150, IXTI76N25T, IXTI12N50P, IXTI10N60P, RU7088R, IXTH80N075L2, IXTH64N65X, IXTH64N10L2, IXTH62N65X2, IXTH52N65X, IXTH4N100L, IXTH48N65X2, IXTH48N15