IXTH80N65X2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTH80N65X2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 890 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 144 nC
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 5208 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: TO-247
Аналог (замена) для IXTH80N65X2
IXTH80N65X2 Datasheet (PDF)
ixth80n65x2.pdf
Advance Technical InformationX2-Class VDSS = 650VIXTH80N65X2Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement ModeAvalanche RatedTO-247GSymbol Test Conditions Maximum Ratings DSD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VG = Gate D = DrainS = Source Tab = DrainVGSS Contin
ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf
Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25
ixth7p50 ixth8p50.pdf
VDSS ID25 RDS(on)IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFETIXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C 7P50 -7 A8P50 -8 AIDM TC = 25C, pulse w
ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf
IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)
ixth8p50 ixtt8p50.pdf
IXTH 8P50VDSS = -500 VStandard PowerIXTT 8P50ID25 = -8 AMOSFETRDS(on) = 1.2 P-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VTO-268 (IXTT)ID25 TC = 25C-8 AIDM TC = 25
ixth88n30p ixtk88n30p ixtq88n30p ixtt88n30p.pdf
IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD