All MOSFET. IXTH80N65X2 Datasheet

 

IXTH80N65X2 Datasheet and Replacement


   Type Designator: IXTH80N65X2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 5208 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-247
 

 IXTH80N65X2 substitution

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IXTH80N65X2 Datasheet (PDF)

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 ixth80n65x2.pdf pdf_icon

IXTH80N65X2

Advance Technical InformationX2-Class VDSS = 650VIXTH80N65X2Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement ModeAvalanche RatedTO-247GSymbol Test Conditions Maximum Ratings DSD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VG = Gate D = DrainS = Source Tab = DrainVGSS Contin

 7.1. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf pdf_icon

IXTH80N65X2

Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH80N65X2

VDSS ID25 RDS(on)IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFETIXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C 7P50 -7 A8P50 -8 AIDM TC = 25C, pulse w

 9.2. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTH80N65X2

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

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Datasheet: IXTK120N65X2 , IXTK102N65X2 , IXTJ6N150 , IXTJ4N150 , IXTJ3N150 , IXTI76N25T , IXTI12N50P , IXTI10N60P , RU7088R , IXTH80N075L2 , IXTH64N65X , IXTH64N10L2 , IXTH62N65X2 , IXTH52N65X , IXTH4N100L , IXTH48N65X2 , IXTH48N15 .

Keywords - IXTH80N65X2 MOSFET datasheet

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