IXTH3N200P3HV Todos los transistores

 

IXTH3N200P3HV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH3N200P3HV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 2000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 133 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO-247HV
 

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IXTH3N200P3HV Datasheet (PDF)

 ..1. Size:201K  ixys
 ixth3n200p3hv ixtt3n200p3hv.pdf pdf_icon

IXTH3N200P3HV

Advance Technical InformationHigh Voltage VDSS = 2000VIXTT3N200P3HVPower MOSFETID25 = 3AIXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M 2000 VVGSS Continuous 20 VVG

 8.1. Size:131K  ixys
 ixth3n120.pdf pdf_icon

IXTH3N200P3HV

High VoltageVDSS = 1200 VIXTH 3N120Power MOSFETsID25 = 3 AN-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 150C 3N120 1200 V3N110 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 3N120 1200 V3N110 1100 VVGS Continuous 20 VG D (TAB)DVGSM Transient 30 V

 8.2. Size:152K  ixys
 ixth3n150.pdf pdf_icon

IXTH3N200P3HV

High Voltage VDSS = 1500VIXTH3N150ID25 = 3APower MOSFET RDS(on) 7.3 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG = Gate D = Dr

 8.3. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf pdf_icon

IXTH3N200P3HV

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

MOSTRAR MÁS

Otros transistores... IXTH80N075L2 , IXTH64N65X , IXTH64N10L2 , IXTH62N65X2 , IXTH52N65X , IXTH4N100L , IXTH48N65X2 , IXTH48N15 , IRF3205 , IXTH34N65X2 , IXTH32N65X , IXTH2N300P3HV , IXTH2N170D2 , IXTH2N150L , IXTH2N150 , IXTH270N04T4 , IXTH20N65X .

History: SSM3J317T | 2SK2545 | CSD17577Q3A | NCEP40T13AGU | SLD5N65S | SPN10T10 | VBA2658

 

 
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