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IXTH3N200P3HV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTH3N200P3HV
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 2000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 133 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: TO-247HV

 Аналог (замена) для IXTH3N200P3HV

 

 

IXTH3N200P3HV Datasheet (PDF)

 ..1. Size:201K  ixys
 ixth3n200p3hv ixtt3n200p3hv.pdf

IXTH3N200P3HV IXTH3N200P3HV

Advance Technical InformationHigh Voltage VDSS = 2000VIXTT3N200P3HVPower MOSFETID25 = 3AIXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M 2000 VVGSS Continuous 20 VVG

 8.1. Size:131K  ixys
 ixth3n120.pdf

IXTH3N200P3HV IXTH3N200P3HV

High VoltageVDSS = 1200 VIXTH 3N120Power MOSFETsID25 = 3 AN-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 150C 3N120 1200 V3N110 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 3N120 1200 V3N110 1100 VVGS Continuous 20 VG D (TAB)DVGSM Transient 30 V

 8.2. Size:152K  ixys
 ixth3n150.pdf

IXTH3N200P3HV IXTH3N200P3HV

High Voltage VDSS = 1500VIXTH3N150ID25 = 3APower MOSFET RDS(on) 7.3 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG = Gate D = Dr

 8.3. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf

IXTH3N200P3HV IXTH3N200P3HV

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

 8.4. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf

IXTH3N200P3HV IXTH3N200P3HV

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

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History: NTD4810NH-1G

 

 
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