IXTH3N200P3HV Specs and Replacement

Type Designator: IXTH3N200P3HV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 2000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 133 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-247HV

IXTH3N200P3HV substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTH3N200P3HV datasheet

 ..1. Size:201K  ixys
 ixth3n200p3hv ixtt3n200p3hv.pdf pdf_icon

IXTH3N200P3HV

Advance Technical Information High Voltage VDSS = 2000V IXTT3N200P3HV Power MOSFET ID25 = 3A IXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M 2000 V VGSS Continuous 20 V VG... See More ⇒

 8.1. Size:131K  ixys
 ixth3n120.pdf pdf_icon

IXTH3N200P3HV

High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 150 C 3N120 1200 V 3N110 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V... See More ⇒

 8.2. Size:152K  ixys
 ixth3n150.pdf pdf_icon

IXTH3N200P3HV

High Voltage VDSS = 1500V IXTH3N150 ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G = Gate D = Dr... See More ⇒

 8.3. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf pdf_icon

IXTH3N200P3HV

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) ... See More ⇒

SHOW MORE

Detailed specifications: IXTH80N075L2, IXTH64N65X, IXTH64N10L2, IXTH62N65X2, IXTH52N65X, IXTH4N100L, IXTH48N65X2, IXTH48N15, IRF3205, IXTH34N65X2, IXTH32N65X, IXTH2N300P3HV, IXTH2N170D2, IXTH2N150L, IXTH2N150, IXTH270N04T4, IXTH20N65X

Keywords - IXTH3N200P3HV MOSFET specs

 IXTH3N200P3HV cross reference

 IXTH3N200P3HV equivalent finder

 IXTH3N200P3HV pdf lookup

 IXTH3N200P3HV substitution

 IXTH3N200P3HV replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs