IXTH06N220P3HV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH06N220P3HV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 2200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 80 Ohm

Encapsulados: TO-247HV

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IXTH06N220P3HV datasheet

 ..1. Size:161K  ixys
 ixth06n220p3hv.pdf pdf_icon

IXTH06N220P3HV

Advance Technical Information High Voltage VDSS = 2200V IXTH06N220P3HV Power MOSFET ID25 = 0.60A RDS(on) 80 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 2200 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 2200 V VGSS Continuous 20 V G = Gate D = Drain

 9.1. Size:160K  ixys
 ixth04n300p3hv.pdf pdf_icon

IXTH06N220P3HV

Advance Technical Information High Voltage VDSS = 3000V IXTH04N300P3HV Power MOSFET ID25 = 0.40A RDS(on) 190 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 3000 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V G = Gate D = Drai

 9.2. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf pdf_icon

IXTH06N220P3HV

High Voltage IXTH02N250 VDSS = 2500V Power MOSFETs ID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 (IXTH) G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V PLUS220SMD (IXTV_S) VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V VGSM Transient

 9.3. Size:160K  ixys
 ixth05n250p3hv.pdf pdf_icon

IXTH06N220P3HV

Advance Technical Information High Voltage VDSS = 2500V IXTH05N250P3HV Power MOSFET ID25 = 0.50A RDS(on) 110 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 2500 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V G = Gate D = Drai

MOSTRAR MÁS

Otros transistores... IXTH140P10T, IXTH12N65X2, IXTH12N50, IXTH12N45A, IXTH12N45, IXTH12N150, IXTH10N60A, IXTH10N60, IRF9540, IXTH05N250P3HV, IXTH04N300P3HV, IXTH02N450HV, IXTF1N450, IXTF02N450, IXTA8N65X2, IXTA80N075L2, IXTA64N10L2