IXTH06N220P3HV Specs and Replacement

Type Designator: IXTH06N220P3HV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 2200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm

Package: TO-247HV

IXTH06N220P3HV substitution

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IXTH06N220P3HV datasheet

 ..1. Size:161K  ixys
 ixth06n220p3hv.pdf pdf_icon

IXTH06N220P3HV

Advance Technical Information High Voltage VDSS = 2200V IXTH06N220P3HV Power MOSFET ID25 = 0.60A RDS(on) 80 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 2200 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 2200 V VGSS Continuous 20 V G = Gate D = Drain... See More ⇒

 9.1. Size:160K  ixys
 ixth04n300p3hv.pdf pdf_icon

IXTH06N220P3HV

Advance Technical Information High Voltage VDSS = 3000V IXTH04N300P3HV Power MOSFET ID25 = 0.40A RDS(on) 190 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 3000 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V G = Gate D = Drai... See More ⇒

 9.2. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf pdf_icon

IXTH06N220P3HV

High Voltage IXTH02N250 VDSS = 2500V Power MOSFETs ID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 (IXTH) G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V PLUS220SMD (IXTV_S) VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V VGSM Transient... See More ⇒

 9.3. Size:160K  ixys
 ixth05n250p3hv.pdf pdf_icon

IXTH06N220P3HV

Advance Technical Information High Voltage VDSS = 2500V IXTH05N250P3HV Power MOSFET ID25 = 0.50A RDS(on) 110 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 2500 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V G = Gate D = Drai... See More ⇒

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Detailed specifications: IXTH140P10T, IXTH12N65X2, IXTH12N50, IXTH12N45A, IXTH12N45, IXTH12N150, IXTH10N60A, IXTH10N60, IRF9540, IXTH05N250P3HV, IXTH04N300P3HV, IXTH02N450HV, IXTF1N450, IXTF02N450, IXTA8N65X2, IXTA80N075L2, IXTA64N10L2

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