IRFP340 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP340
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente (Vds): 400 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 11 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 62 nC
Resistencia drenaje-fuente RDS(on): 0.55 Ohm
Empaquetado / Estuche: TO3P
Búsqueda de reemplazo de MOSFET IRFP340
IRFP340 Datasheet (PDF)
1.1. irfp340r.pdf 
Size:62K _upd-mosfet
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
1.2. irfp340pbf.pdf Size:1554K _upd-mosfet
IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.55 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT • Fast Switching Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant
1.3. irfp340.pdf Size:172K _international_rectifier
1.4. irfp340pbf.pdf Size:1801K _international_rectifier
PD- 95712 IRFP340PbF Lead-Free 8/2/04 Document Number: 91222 www.vishay.com 1 IRFP340PbF Document Number: 91222 www.vishay.com 2 IRFP340PbF Document Number: 91222 www.vishay.com 3 IRFP340PbF Document Number: 91222 www.vishay.com 4 IRFP340PbF Document Number: 91222 www.vishay.com 5 IRFP340PbF Document Number: 91222 www.vishay.com 6 IRFP340PbF Peak Diode Recovery dv/dt
1.5. irfp340a.pdf Size:933K _samsung
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit
1.6. irfp340-343 irf740-743.pdf Size:191K _samsung
1.7. irfp340 sihfp340.pdf Size:1548K _vishay
IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive
Otros transistores... IRFP254A , IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRF830 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI .
