IRFP340 - описание и поиск аналогов

 ..1. Size:172K  international rectifier
 irfp340.pdf 

 ..2. Size:1801K  international rectifier
 irfp340pbf.pdf 

PD- 95712 IRFP340PbF Lead-Free 8/2/04 Document Number 91222 www.vishay.com 1 IRFP340PbF Document Number 91222 www.vishay.com 2 IRFP340PbF Document Number 91222 www.vishay.com 3 IRFP340PbF Document Number 91222 www.vishay.com 4 IRFP340PbF Document Number 91222 www.vishay.com 5 IRFP340PbF Document Number 91222 www.vishay.com 6 IRFP340PbF Peak Diode Recovery d

 ..3. Size:191K  samsung
 irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf 

 ..4. Size:1548K  vishay
 irfp340 sihfp340.pdf 

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant

 ..5. Size:1554K  vishay
 irfp340pbf sihfp340.pdf 

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant

 0.1. Size:191K  samsung
 irfp340-343 irf740-743.pdf 

 0.2. Size:933K  samsung
 irfp340a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 0.3. Size:62K  inchange semiconductor
 irfp340r.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.55 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 0.4. Size:237K  inchange semiconductor
 irfp340a.pdf 

isc N-Channel MOSFET Transistor IRFP340A FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies