IRFP340 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP340
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 62(max) nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
Package: TO247AC
IRFP340 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP340 Datasheet (PDF)
0.1. irfp340.pdf 
Size:172K _international_rectifier
0.2. irfp340pbf.pdf Size:1801K _international_rectifier
PD- 95712IRFP340PbF Lead-Free8/2/04Document Number: 91222 www.vishay.com1IRFP340PbFDocument Number: 91222 www.vishay.com2IRFP340PbFDocument Number: 91222 www.vishay.com3IRFP340PbFDocument Number: 91222 www.vishay.com4IRFP340PbFDocument Number: 91222 www.vishay.com5IRFP340PbFDocument Number: 91222 www.vishay.com6IRFP340PbFPeak Diode Recovery d
0.3. irfp340a.pdf Size:933K _samsung
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
0.4. irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf Size:191K _samsung
0.5. irfp340-343 irf740-743.pdf Size:191K _samsung
0.6. irfp340 sihfp340.pdf Size:1548K _vishay
IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
0.7. irfp340pbf sihfp340.pdf Size:1554K _vishay
IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
0.8. irfp340a.pdf Size:237K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP340AFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
0.9. irfp340r.pdf Size:62K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
Datasheet: IRFP254A , IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRF830 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI .
