IRFP341 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP341
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 350 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 42 nC
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 178 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET IRFP341
IRFP341 Datasheet (PDF)
irfp3415pbf.pdf
PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi
irfp3415.pdf
PD - 93962IRFP3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon a
irfp3415pbf.pdf
PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi
irfp341r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfp3415.pdf
isc N-Channel MOSFET Transistor IRFP3415IIRFP3415FEATURESStatic drain-source on-resistance:RDS(on)42mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Otros transistores... IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , K3569 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F