IRFP341 Todos los transistores

 

IRFP341 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP341

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente |Vds|: 350 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 42 nC

Tiempo de elevación (tr): 27 nS

Conductancia de drenaje-sustrato (Cd): 178 pF

Resistencia drenaje-fuente RDS(on): 0.55 Ohm

Empaquetado / Estuche: TO3P

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IRFP341 Datasheet (PDF)

..1. irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf Size:191K _samsung

IRFP341 IRFP341

0.1. irfp3415.pdf Size:92K _international_rectifier

IRFP341 IRFP341

PD - 93962IRFP3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon a

0.2. irfp3415pbf.pdf Size:161K _international_rectifier

IRFP341 IRFP341

PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi

 

 0.3. irfp3415pbf.pdf Size:161K _infineon

IRFP341 IRFP341

PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi

0.4. irfp3415.pdf Size:241K _inchange_semiconductor

IRFP341 IRFP341

isc N-Channel MOSFET Transistor IRFP3415IIRFP3415FEATURESStatic drain-source on-resistance:RDS(on)42mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 0.5. irfp341r.pdf Size:62K _inchange_semiconductor

IRFP341 IRFP341

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

Otros transistores... IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP250 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 .

 

 
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