IRFP341 Todos los transistores

 ..1. Size:191K  samsung
 irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf

 0.1. Size:161K  international rectifier
 irfp3415pbf.pdf

PD - 95512 IRFP3415PbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 150V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.042 G l Lead-Free ID = 43A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

 0.2. Size:92K  international rectifier
 irfp3415.pdf

PD - 93962 IRFP3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175 C Operating Temperature Fast Switching RDS(on) = 0.042 Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

 0.3. Size:62K  inchange semiconductor
 irfp341r.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- VDSS= 350V(Min) Static Drain-Source On-Resistance RDS(on) = 0.55 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 0.4. Size:241K  inchange semiconductor
 irfp3415.pdf

isc N-Channel MOSFET Transistor IRFP3415 IIRFP3415 FEATURES Static drain-source on-resistance RDS(on) 42m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source