IRFP341 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP341
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 350 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
Package: TO3P
IRFP341 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP341 Datasheet (PDF)
1.1. irfp3415pbf.pdf 
Size:161K _upd-mosfet
PD - 95512 IRFP3415PbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 150V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.042Ω G l Lead-Free ID = 43A S Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi
1.2. irfp341r.pdf Size:62K _upd-mosfet
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
1.3. irfp3415.pdf Size:92K _international_rectifier
PD - 93962 IRFP3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175C Operating Temperature Fast Switching RDS(on) = 0.042? Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi
Datasheet: IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRF730 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 .
