IXFH16N60P3 Todos los transistores

 

IXFH16N60P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH16N60P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 347 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 217 pF

Resistencia drenaje-fuente RDS(on): 0.44 Ohm

Empaquetado / Estuche: TO-247

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IXFH16N60P3 Datasheet (PDF)

1.1. ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Size:166K _ixys

IXFH16N60P3
IXFH16N60P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 440mΩ ≤ Ω ≤ Ω IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

3.1. ixfh16n90 ixfx16n90.pdf Size:112K _ixys

IXFH16N60P3
IXFH16N60P3

IXFH16N90 VDSS = 900 V HiPerFETTM IXFX16N90 ID25 = 16 A Power MOSFETs RDS(on) = 0.65 W N-Channel Enhancement Mode t £ 200 ns High dv/dt, Low t , HDMOSTM Family rr rr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 2

3.2. ixfa16n50p ixfh16n50p ixfp16n50p.pdf Size:252K _ixys

IXFH16N60P3
IXFH16N60P3

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 4

 3.3. ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Size:173K _ixys

IXFH16N60P3
IXFH16N60P3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 15

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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