All MOSFET. IXFH16N60P3 Datasheet

 

IXFH16N60P3 Datasheet and Replacement


   Type Designator: IXFH16N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: TO-247
 

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IXFH16N60P3 Datasheet (PDF)

 ..1. Size:166K  ixys
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IXFH16N60P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA16N60P3Power MOSFETs ID25 = 16AIXFP16N60P3 RDS(on) 440m IXFH16N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

 7.1. Size:252K  ixys
ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFH16N60P3

IXFA 16N50P VDSS = 500 VPolarHVTM HiPerFETIXFH 16N50P ID25 = 16 APower MOSFETIXFP 16N50P RDS(on) 400 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

 7.2. Size:112K  ixys
ixfh16n90 ixfx16n90.pdf pdf_icon

IXFH16N60P3

IXFH16N90 VDSS = 900 VHiPerFETTMIXFX16N90 ID25 = 16 APower MOSFETsRDS(on) = 0.65 WN-Channel Enhancement Modet 200 nsHigh dv/dt, Low t , HDMOSTM FamilyrrrrPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD(IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

 7.3. Size:173K  ixys
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf pdf_icon

IXFH16N60P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFA16N50P3Power MOSFETs ID25 = 16AIXFP16N50P3 RDS(on) 360m IXFH16N50P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 15

Datasheet: IXFH30N60X , IXFH30N50Q , IXFH26N50P3 , IXFH24N60X , IXFH22N65X2 , IXFH20N50P3 , IXFH18N60X , IXFH18N100Q3 , SKD502T , IXFH16N50P3 , IXFH150N20T , IXFH14N60P3 , IXFH120N25T , IXFH10N100Q , IXFD80N10 , IXFC80N10 , IXFC80N08 .

History: S10H18RN | STD35NF3LLT4 | IXTT140N10P | SSF2341E | AOTL66515 | HM3401PR | HM5N30K

Keywords - IXFH16N60P3 MOSFET datasheet

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