IPU60R1K4C6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPU60R1K4C6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 16 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de IPU60R1K4C6 MOSFET
IPU60R1K4C6 datasheet
ipu60r1k4c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R1K4C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer
ipu60r1k4c6.pdf
isc N-Channel MOSFET Transistor IPU60R1K4C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
ipd60r1k0ce ipu60r1k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
ipd60r1k5ce ipu60r1k5ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
Otros transistores... IPU80R2K8CE , IPU80R1K4CE , IPU80R1K0CE , IPU60R950C6 , IPU60R600C6 , IPU60R2K1CE , IPU60R2K0C6 , IPU60R1K5CE , SKD502T , IPU60R1K0CE , IPU50R950CE , IPU50R3K0CE , IPU50R2K0CE , IPU50R1K4CE , IPU13N03LAG , IPU06N03LAG , IPT059N15N3 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOTF20N40L | AOTF11N60L | AOT11N60L | AONS21303C | AOI280A60 | AOB66914L | AO3485C | AOI780A70 | AOB42S60L | AOTF950A70L | AOTF27S60L | AOTF11S60L | AONV070V65G1 | AOM065V120X2Q | AOM033V120X2 | AOK500V120X2
Popular searches
2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827
