IPU60R1K4C6 MOSFET Datasheet: N-Ch, 600V, 3.2A. Full specification with pinout and replacement list

IPU60R1K4C6 Specs and Replacement

Type Designator: IPU60R1K4C6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 16 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-251

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