IRFP360 Todos los transistores

 

IRFP360 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP360

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 280 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 23 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 210 nC

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET IRFP360

 

IRFP360 Datasheet (PDF)

1.1. irfp360pbf.pdf Size:965K _upd-mosfet

IRFP360
IRFP360

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Lead (

1.2. irfp360 irfp362.pdf Size:634K _upd-mosfet

IRFP360
IRFP360



 1.3. irfp360lc.pdf Size:162K _international_rectifier

IRFP360
IRFP360

PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

1.4. irfp360.pdf Size:153K _international_rectifier

IRFP360
IRFP360

Document Number: 90292 www.vishay.com 1001 www.vishay.com Document Number: 90292 1002 Document Number: 90292 www.vishay.com 1003 Document Number: 90292 www.vishay.com 1004 Document Number: 90292 www.vishay.com 1005 Document Number: 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

 1.5. irfp360 sihfp360.pdf Size:995K _vishay

IRFP360
IRFP360

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Compliant to RoHS Directi

1.6. irfp360lc sihfp360lc.pdf Size:1031K _vishay

IRFP360
IRFP360

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive Avalanche Rated Co

1.7. irfp360pbf.pdf Size:272K _inchange_semiconductor

IRFP360
IRFP360

isc N-Channel MOSFET Transistor IRFP360PBF FEATURES ·Drain Current –I = 23A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.2Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general pur

1.8. irfp360lc.pdf Size:212K _inchange_semiconductor

IRFP360
IRFP360

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP360LC ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

Otros transistores... IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP4227 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A .

 

 
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