Справочник MOSFET. IRFP360

 

IRFP360 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP360

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 280 W

Предельно допустимое напряжение сток-исток (Uds): 400 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 23 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 210 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm

Тип корпуса: TO3P

Аналог (замена) для IRFP360

 

 

IRFP360 Datasheet (PDF)

1.1. irfp360lc.pdf Size:162K _international_rectifier

IRFP360
IRFP360

PD - 9.1230 IRFP360LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20Ω Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

1.2. irfp360.pdf Size:153K _international_rectifier

IRFP360
IRFP360

Document Number: 90292 www.vishay.com 1001 www.vishay.com Document Number: 90292 1002 Document Number: 90292 www.vishay.com 1003 Document Number: 90292 www.vishay.com 1004 Document Number: 90292 www.vishay.com 1005 Document Number: 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,

 1.3. irfp360 irfp362.pdf Size:634K _njs

IRFP360
IRFP360



1.4. irfp360pbf.pdf Size:965K _vishay

IRFP360
IRFP360

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Lead (

 1.5. irfp360 sihfp360.pdf Size:995K _vishay

IRFP360
IRFP360

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 • Ease of Paralleling Qgd (nC) 110 Configuration Single • Simple Drive Requirements • Complia

1.6. irfp360lc sihfp360lc.pdf Size:1031K _vishay

IRFP360
IRFP360

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.20 • Enhanced 30 V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 • Isolated Central Mounting Hole Qgs (nC) 28 • Dynamic dV/dt Rated Qgd (nC) 45 • Repetitive A

1.7. irfp360pbf.pdf Size:272K _inchange_semiconductor

IRFP360
IRFP360

isc N-Channel MOSFET Transistor IRFP360PBF FEATURES ·Drain Current –I = 23A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.2Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general pur

1.8. irfp360lc.pdf Size:212K _inchange_semiconductor

IRFP360
IRFP360

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP360LC ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

Другие MOSFET... IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP4227 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A .

 

 
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