Аналог (замена) для IRFP360

 

 

IRFP360 Datasheet (PDF)

1.1. irfp360lc.pdf Size:162K _international_rectifier

PD - 9.1230 IRFP360LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20Ω Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

1.2. irfp360.pdf Size:153K _international_rectifier

Document Number: 90292 www.vishay.com 1001 www.vishay.com Document Number: 90292 1002 Document Number: 90292 www.vishay.com 1003 Document Number: 90292 www.vishay.com 1004 Document Number: 90292 www.vishay.com 1005 Document Number: 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,

 1.3. irfp360 irfp362.pdf Size:634K _njs



1.4. irfp360pbf.pdf Size:965K _vishay

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Lead (

 1.5. irfp360 sihfp360.pdf Size:995K _vishay

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 • Ease of Paralleling Qgd (nC) 110 Configuration Single • Simple Drive Requirements • Complia

1.6. irfp360lc sihfp360lc.pdf Size:1031K _vishay

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.20 • Enhanced 30 V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 • Isolated Central Mounting Hole Qgs (nC) 28 • Dynamic dV/dt Rated Qgd (nC) 45 • Repetitive A

1.7. irfp360pbf.pdf Size:272K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFP360PBF FEATURES ·Drain Current –I = 23A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.2Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general pur

1.8. irfp360lc.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP360LC ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

     

 

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MOSFET: IPF090N03LG | IPF039N03LG | IPU64CN10NG | IPU105N03LG | WFP75N08 | UTC7N65L | SVF4N60CAMJ | SVF4N60CAMN | SVF4N60CAT | SVF4N60CAD | SVF4N60CAK | SVF4N60CAF | SUB85N03-07P | SUP85N03-07P | STP110N7F6 |