IRFP360 - описание и поиск аналогов

 ..1. Size:153K  international rectifier
 irfp360.pdf 

Document Number 90292 www.vishay.com 1001 www.vishay.com Document Number 90292 1002 Document Number 90292 www.vishay.com 1003 Document Number 90292 www.vishay.com 1004 Document Number 90292 www.vishay.com 1005 Document Number 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,

 ..2. Size:634K  njs
 irfp360 irfp362.pdf 

 ..3. Size:965K  vishay
 irfp360pbf.pdf 

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Lead (

 ..4. Size:995K  vishay
 irfp360 sihfp360.pdf 

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Complia

 ..5. Size:999K  infineon
 irfp360 sihfp360.pdf 

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Complia

 ..6. Size:272K  inchange semiconductor
 irfp360pbf.pdf 

isc N-Channel MOSFET Transistor IRFP360PBF FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 0.1. Size:162K  international rectifier
 irfp360lc.pdf 

PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

 0.2. Size:1031K  vishay
 irfp360lc sihfp360lc.pdf 

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive A

 0.3. Size:212K  inchange semiconductor
 irfp360lc.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP360LC FEATURES With TO-247 packaging Uninterruptible power supply High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour