IRFP360 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP360
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 210 nC
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO3P
IRFP360 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP360 Datasheet (PDF)
0.1. irfp360lc.pdf 
Size:162K _international_rectifier
PD - 9.1230 IRFP360LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20Ω Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
0.2. irfp360.pdf Size:153K _international_rectifier
Document Number: 90292 www.vishay.com 1001 www.vishay.com Document Number: 90292 1002 Document Number: 90292 www.vishay.com 1003 Document Number: 90292 www.vishay.com 1004 Document Number: 90292 www.vishay.com 1005 Document Number: 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,
0.3. irfp360 irfp362.pdf Size:634K _njs
0.4. irfp360pbf.pdf Size:965K _vishay
IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Lead (
0.5. irfp360 sihfp360.pdf Size:995K _vishay
IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 • Ease of Paralleling Qgd (nC) 110 Configuration Single • Simple Drive Requirements • Complia
0.6. irfp360lc sihfp360lc.pdf Size:1031K _vishay
IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.20 • Enhanced 30 V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 • Isolated Central Mounting Hole Qgs (nC) 28 • Dynamic dV/dt Rated Qgd (nC) 45 • Repetitive A
Datasheet: IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP4227 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A .
