IPP65R074C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP65R074C6
Código: 65C6074
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 480.8 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 57.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 138 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 170 pF
Resistencia entre drenaje y fuente RDS(on): 0.074 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET IPP65R074C6
IPP65R074C6 Datasheet (PDF)
ipp65r074c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPP65R074C6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPP65R074C6TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion
ipp65r074c6.pdf
isc N-Channel MOSFET Transistor IPP65R074C6IIPP65R074C6FEATURESStatic drain-source on-resistance:RDS(on) 0.074Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSO
ipp65r065c7.pdf
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ipp65r045c7.pdf
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ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf
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ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs
ipp65r095c7.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPP65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPP65R095C7TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and
ipp65r065c7.pdf
isc N-Channel MOSFET Transistor IPP65R065C7IIPP65R065C7FEATURESStatic drain-source on-resistance:RDS(on) 0.065Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re
ipp65r045c7.pdf
isc N-Channel MOSFET Transistor IPP65R045C7IIPP65R045C7FEATURESStatic drain-source on-resistance:RDS(on) 0.045Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re
ipp65r099c6.pdf
isc N-Channel MOSFET Transistor IPP65R099C6IIPP65R099C6FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSO
ipp65r095c7.pdf
isc N-Channel MOSFET Transistor IPP65R095C7IIPP65R095C7FEATURESStatic drain-source on-resistance:RDS(on) 0.095Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOSFEToffering better efficiency,re
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History: SIHP120N60E
