IPP65R074C6 Specs and Replacement
Type Designator: IPP65R074C6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 480.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
Package: TO-220
IPP65R074C6 substitution
- MOSFET ⓘ Cross-Reference Search
IPP65R074C6 datasheet
ipp65r074c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPP65R074C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPP65R074C6 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒
ipp65r074c6.pdf
isc N-Channel MOSFET Transistor IPP65R074C6 IIPP65R074C6 FEATURES Static drain-source on-resistance RDS(on) 0.074 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSO... See More ⇒
ipp65r065c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPP65R065C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPP65R065C7 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒
ipp65r045c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPP65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPP65R045C7 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒
Detailed specifications: IPP65R190C6, IPP65R150CFDA, IPP65R150CFD, IPP65R125C7, IPP65R110CFDA, IPP65R110CFD, IPP65R099C6, IPP65R095C7, 7N60, IPP65R065C7, IPP65R045C7, IPP60R600P6, IPP60R380P6, IPP60R330P6, IPP60R280P6, IPP60R230P6, IPP60R1K4C6
Keywords - IPP65R074C6 MOSFET specs
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