IRFP3710 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFP3710
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 200 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 57 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 190(max) nC
   Tiempo de subida (tr): 59 nS
   Conductancia de drenaje-sustrato (Cd): 640 pF
   Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
   Paquete / Cubierta: TO247AC

Búsqueda de reemplazo de MOSFET IRFP3710

IRFP3710 Datasheet (PDF)

..1. Size:229K international rectifier
irfp3710pbf.pdf

PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili

..2. Size:185K international rectifier
irfp3710.pdf

PD-91490CIRFP3710HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.025W Fully Avalanche RatedGID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit

..3. Size:229K infineon
irfp3710pbf.pdf

..4. Size:242K inchange semiconductor
irfp3710.pdf

isc N-Channel MOSFET Transistor IRFP3710IIRFP3710FEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

8.1. Size:214K international rectifier
irfp3703pbf.pdf

PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1

8.2. Size:236K international rectifier
irfp3703.pdf

PD - 93917AIRFP3703SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Synchronous Rectification 30V 0.0028 210A Active ORingBenefits Ultra Low On-Resistance Low Gate Impedance to Reduce SwitchingLosses Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100

8.3. Size:214K infineon
irfp3703pbf.pdf

8.4. Size:241K inchange semiconductor
irfp3703.pdf

isc N-Channel MOSFET Transistor IRFP3703IIRFP3703FEATURESStatic drain-source on-resistance:RDS(on)2.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 V

Otros transistores... IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFB3607 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 .

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