IRFP3710 Todos los transistores

 

IRFP3710 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP3710

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 51 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 66.7 nC

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET IRFP3710

 

IRFP3710 Datasheet (PDF)

1.1. irfp3710pbf.pdf Size:229K _international_rectifier

IRFP3710
IRFP3710

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

1.2. irfp3710.pdf Size:185K _international_rectifier

IRFP3710
IRFP3710

PD-91490C IRFP3710 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit

 4.1. irfp3703.pdf Size:236K _international_rectifier

IRFP3710
IRFP3710

PD - 93917A IRFP3703 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028Ω 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100

4.2. irfp3703pbf.pdf Size:214K _international_rectifier

IRFP3710
IRFP3710

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028Ω 210A† l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 1

Otros transistores... IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , BUZ90 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 .

 

 
Back to Top

 


IRFP3710
  IRFP3710
  IRFP3710
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 12N65KG-TQ | 12N65KG-TF | 12N65KG-TA | 12N65KL-TQ | 12N65KL-TA | IRFU430A | IRFSL7787 | IRFSL7762 | IRFSL4510 | IRFP4905 | IRFP3207Z | IRFL3713S | IPI80CN10N | IPI600N25N3 | IPI530N15N3 |

 

 

 
Back to Top