IRFP3710 Todos los transistores

 

IRFP3710 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP3710

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 51 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 66.7 nC

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Empaquetado / Estuche: TO3P

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IRFP3710 Datasheet (PDF)

1.1. irfp3710pbf.pdf Size:229K _upd-mosfet

IRFP3710
IRFP3710

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

1.2. irfp3710pbf.pdf Size:229K _international_rectifier

IRFP3710
IRFP3710

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

 1.3. irfp3710.pdf Size:185K _international_rectifier

IRFP3710
IRFP3710

PD-91490C IRFP3710 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit

1.4. irfp3710.pdf Size:242K _inchange_semiconductor

IRFP3710
IRFP3710

isc N-Channel MOSFET Transistor IRFP3710,IIRFP3710 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

Otros transistores... IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , BUZ90 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 .

 

 
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