IRFP3710 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP3710
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 57 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 190(max) nC
Время нарастания (tr): 59 ns
Выходная емкость (Cd): 640 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.025 Ohm
Тип корпуса: TO247AC
IRFP3710 Datasheet (PDF)
..1. irfp3710pbf.pdf 
Size:229K _international_rectifier
PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili
..2. irfp3710.pdf Size:185K _international_rectifier
PD-91490CIRFP3710HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.025W Fully Avalanche RatedGID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit
..3. irfp3710pbf.pdf Size:229K _infineon
PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili
..4. irfp3710.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3710IIRFP3710FEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
8.1. irfp3703.pdf Size:236K _international_rectifier
PD - 93917AIRFP3703SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Synchronous Rectification 30V 0.0028 210A Active ORingBenefits Ultra Low On-Resistance Low Gate Impedance to Reduce SwitchingLosses Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100
8.2. irfp3703pbf.pdf Size:214K _international_rectifier
PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1
8.3. irfp3703pbf.pdf Size:214K _infineon
PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1
8.4. irfp3703.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3703IIRFP3703FEATURESStatic drain-source on-resistance:RDS(on)2.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 V
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