Справочник MOSFET. IRFP3710

 

IRFP3710 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP3710

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 180 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Максимально допустимый постоянный ток стока (Id): 51 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 66.7 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm

Тип корпуса: TO3P

Аналог (замена) для IRFP3710

 

 

IRFP3710 Datasheet (PDF)

1.1. irfp3710pbf.pdf Size:229K _upd-mosfet

IRFP3710
IRFP3710

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

1.2. irfp3710.pdf Size:185K _international_rectifier

IRFP3710
IRFP3710

PD-91490C IRFP3710 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

 4.1. irfp3703pbf.pdf Size:214K _upd-mosfet

IRFP3710
IRFP3710

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028Ω 210A† l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 1

4.2. irfp3703.pdf Size:236K _international_rectifier

IRFP3710
IRFP3710

PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028? 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100C Cont

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MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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