IRFP3710 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP3710
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 180 W
Предельно допустимое напряжение сток-исток (Uds): 100 V
Предельно допустимое напряжение затвор-исток (Ugs): 10 V
Максимально допустимый постоянный ток стока (Id): 51 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 66.7 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: TO3P
IRFP3710 Datasheet (PDF)
1.1. irfp3710pbf.pdf 
Size:229K _international_rectifier
PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili
1.2. irfp3710.pdf Size:185K _international_rectifier
PD-91490C IRFP3710 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit
4.1. irfp3703.pdf Size:236K _international_rectifier
PD - 93917A IRFP3703 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028Ω 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100
4.2. irfp3703pbf.pdf Size:214K _international_rectifier
PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028Ω 210A† l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 1
Другие MOSFET... IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , BUZ90 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 .
