IRFP3710 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP3710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 51 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 66.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: TO3P
IRFP3710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP3710 Datasheet (PDF)
1.1. irfp3710pbf.pdf 
Size:229K _upd-mosfet
PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili
1.2. irfp3710.pdf Size:185K _international_rectifier
PD-91490C IRFP3710 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com
1.3. irfp3710.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3710，IIRFP3710 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
Datasheet: IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , BUZ90 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 .
