All MOSFET. IRFP3710 Datasheet

 

IRFP3710 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP3710

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 51 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 66.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO3P

IRFP3710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP3710 Datasheet (PDF)

1.1. irfp3710pbf.pdf Size:229K _upd-mosfet

IRFP3710 IRFP3710

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

1.2. irfp3710pbf.pdf Size:229K _international_rectifier

IRFP3710 IRFP3710

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

 1.3. irfp3710.pdf Size:185K _international_rectifier

IRFP3710 IRFP3710

PD-91490C IRFP3710 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit

1.4. irfp3710.pdf Size:242K _inchange_semiconductor

IRFP3710 IRFP3710

isc N-Channel MOSFET Transistor IRFP3710，IIRFP3710 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

Datasheet: IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , BUZ90 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 .

 

 
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