All MOSFET. IRFP3710 Datasheet

 

IRFP3710 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP3710

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 57 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 190(max) nC

Rise Time (tr): 59 nS

Drain-Source Capacitance (Cd): 640 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO247AC

IRFP3710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP3710 Datasheet (PDF)

0.1. irfp3710pbf.pdf Size:229K _international_rectifier

IRFP3710 IRFP3710

PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili

0.2. irfp3710.pdf Size:185K _international_rectifier

IRFP3710 IRFP3710

PD-91490CIRFP3710HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.025W Fully Avalanche RatedGID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit

 0.3. irfp3710pbf.pdf Size:229K _infineon

IRFP3710 IRFP3710

PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili

0.4. irfp3710.pdf Size:242K _inchange_semiconductor

IRFP3710 IRFP3710

isc N-Channel MOSFET Transistor IRFP3710IIRFP3710FEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , BUZ90 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 .

 

 
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