IPP034N08N5 Todos los transistores

 

IPP034N08N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP034N08N5
   Código: 034N08N5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.8 V
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 790 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de IPP034N08N5 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPP034N08N5 Datasheet (PDF)

 ..1. Size:1806K  infineon
 ipp034n08n5.pdf pdf_icon

IPP034N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP034N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP034N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 ..2. Size:246K  inchange semiconductor
 ipp034n08n5.pdf pdf_icon

IPP034N08N5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N08N5IIPP034N08N5FEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

 6.1. Size:726K  infineon
 ipp034n03l .pdf pdf_icon

IPP034N08N5

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 6.2. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf pdf_icon

IPP034N08N5

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

MOSTRAR MÁS

Otros transistores... IPP080N03L , IPP060N06N , IPP055N03L , IPP052N08N5 , IPP04CN10N , IPP042N03L , IPP040N06N , IPP037N08N3GE8181 , IRF9540 , IPP034N03L , IPP030N10N5 , IPP029N06N , IPP027N08N5 , IPP023N10N5 , IPP023N08N5 , IPP020N08N5 , IPP020N06N .

History: IRFR220PBF | WPM3005 | SFG150N10KF | IPN80R1K2P7 | RD3L080SN | FDB86363-F085 | KIA4N60H-220F

 

 
Back to Top

 


 
.