IPP034N08N5 - описание и поиск аналогов

 ..1. Size:1806K  infineon
 ipp034n08n5.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP034N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP034N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis

 ..2. Size:246K  inchange semiconductor
 ipp034n08n5.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP034N08N5 IIPP034N08N5 FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

 6.1. Size:726K  infineon
 ipp034n03l .pdf 

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 6.2. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf 

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 6.3. Size:723K  infineon
 ipb034n03l ipp034n03l.pdf 

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 6.4. Size:246K  inchange semiconductor
 ipp034n03l.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP034N03L IIPP034N03L FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE