All MOSFET. IPP034N08N5 Datasheet

 

IPP034N08N5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP034N08N5
   Marking Code: 034N08N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 167 W
   Maximum Drain-Source Voltage |Vds|: 80 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.8 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 790 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0034 Ohm
   Package: TO-220

 IPP034N08N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP034N08N5 Datasheet (PDF)

 ..1. Size:1806K  infineon
 ipp034n08n5.pdf

IPP034N08N5 IPP034N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP034N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP034N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 ..2. Size:246K  inchange semiconductor
 ipp034n08n5.pdf

IPP034N08N5 IPP034N08N5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N08N5IIPP034N08N5FEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

 6.1. Size:726K  infineon
 ipp034n03l .pdf

IPP034N08N5 IPP034N08N5

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 6.2. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf

IPP034N08N5 IPP034N08N5

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 6.3. Size:723K  infineon
 ipb034n03l ipp034n03l.pdf

IPP034N08N5 IPP034N08N5

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 6.4. Size:246K  inchange semiconductor
 ipp034n03l.pdf

IPP034N08N5 IPP034N08N5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N03LIIPP034N03LFEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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