IPL65R310E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPL65R310E6
   Código: 65E6310
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: THINPAK8X8

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IPL65R310E6 Datasheet (PDF)

..1. Size:1593K infineon
ipl65r310e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R310E6 Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R310E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

7.1. Size:1798K infineon
ipl65r340cfd.pdf

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ipl65r460cfd.pdf

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ipl65r070c7.pdf

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ipl65r725cfd.pdf

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ipl65r195c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

8.6. Size:1337K infineon
ipl65r1k5c6s.pdf

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ipl65r130c7.pdf

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ipl65r099c7.pdf

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ipl65r165cfd.pdf

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ipl65r420e6.pdf

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ipl65r210cfd.pdf

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8.12. Size:1600K infineon
ipl65r190e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R190E6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R190E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

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ipl65r230c7.pdf

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8.14. Size:1593K infineon
ipl65r660e6.pdf

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ipl65r650c6s.pdf

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