IPL65R310E6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPL65R310E6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: THINPAK8X8
IPL65R310E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPL65R310E6 Datasheet (PDF)
ipl65r310e6.pdf
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ipl65r340cfd.pdf
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ipl65r460cfd.pdf
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ipl65r070c7.pdf
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ipl65r725cfd.pdf
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ipl65r1k0c6s.pdf
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ipl65r195c7.pdf
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ipl65r1k5c6s.pdf
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ipl65r130c7.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R130C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R130C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
ipl65r099c7.pdf
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ipl65r165cfd.pdf
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ipl65r420e6.pdf
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ipl65r210cfd.pdf
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ipl65r190e6.pdf
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ipl65r230c7.pdf
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ipl65r660e6.pdf
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ipl65r650c6s.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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