IPL65R1K5C6S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPL65R1K5C6S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.9 nS
Cossⓘ - Capacitancia de salida: 18 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Encapsulados: THINPAK5X6
Búsqueda de reemplazo de IPL65R1K5C6S MOSFET
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IPL65R1K5C6S datasheet
ipl65r1k5c6s.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPL65R1K5C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C6 Power Transistor IPL65R1K5C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an
ipl65r1k0c6s.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPL65R1K0C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C6 Power Transistor IPL65R1K0C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an
ipl65r195c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPL65R195C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPL65R195C7 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and
ipl65r130c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPL65R130C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPL65R130C7 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and
Otros transistores... IPL65R660E6, IPL65R650C6S, IPL65R460CFD, IPL65R420E6, IPL65R340CFD, IPL65R310E6, IPL65R230C7, IPL65R210CFD, BS170, IPL65R1K0C6S, IPL65R195C7, IPL65R190E6, IPL65R165CFD, IPL65R130C7, IPL65R099C7, IPL65R070C7, IPL60R650P6S
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