IPL65R1K5C6S Specs and Replacement
Type Designator: IPL65R1K5C6S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.9 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: THINPAK5X6
IPL65R1K5C6S substitution
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IPL65R1K5C6S datasheet
ipl65r1k5c6s.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPL65R1K5C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C6 Power Transistor IPL65R1K5C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an... See More ⇒
ipl65r1k0c6s.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPL65R1K0C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C6 Power Transistor IPL65R1K0C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an... See More ⇒
ipl65r195c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPL65R195C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPL65R195C7 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒
ipl65r130c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPL65R130C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPL65R130C7 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒
Detailed specifications: IPL65R660E6, IPL65R650C6S, IPL65R460CFD, IPL65R420E6, IPL65R340CFD, IPL65R310E6, IPL65R230C7, IPL65R210CFD, BS170, IPL65R1K0C6S, IPL65R195C7, IPL65R190E6, IPL65R165CFD, IPL65R130C7, IPL65R099C7, IPL65R070C7, IPL60R650P6S
Keywords - IPL65R1K5C6S MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SIF4N65C
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