IPL65R1K5C6S MOSFET. Datasheet pdf. Equivalent

   Type Designator: IPL65R1K5C6S
   Marking Code: 65C61K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.9 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: THINPAK5X6

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