All MOSFET. IPL65R1K5C6S Datasheet

 

IPL65R1K5C6S Datasheet and Replacement


   Type Designator: IPL65R1K5C6S
   Marking Code: 65C61K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.9 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: THINPAK5X6
 

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IPL65R1K5C6S Datasheet (PDF)

 ..1. Size:1337K  infineon
 ipl65r1k5c6s.pdf pdf_icon

IPL65R1K5C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 6.1. Size:1322K  infineon
 ipl65r1k0c6s.pdf pdf_icon

IPL65R1K5C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K0C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K0C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 7.1. Size:1769K  infineon
 ipl65r195c7.pdf pdf_icon

IPL65R1K5C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1601K  infineon
 ipl65r130c7.pdf pdf_icon

IPL65R1K5C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R130C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R130C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

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Datasheet: IPL65R660E6 , IPL65R650C6S , IPL65R460CFD , IPL65R420E6 , IPL65R340CFD , IPL65R310E6 , IPL65R230C7 , IPL65R210CFD , 18N50 , IPL65R1K0C6S , IPL65R195C7 , IPL65R190E6 , IPL65R165CFD , IPL65R130C7 , IPL65R099C7 , IPL65R070C7 , IPL60R650P6S .

History: WPM2341A-3-TR | NCEP070N12D

Keywords - IPL65R1K5C6S MOSFET datasheet

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