IPL60R2K1C6S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPL60R2K1C6S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 12 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm

Encapsulados: THINPAK5X6

 Búsqueda de reemplazo de IPL60R2K1C6S MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPL60R2K1C6S datasheet

 ..1. Size:1321K  infineon
 ipl60r2k1c6s.pdf pdf_icon

IPL60R2K1C6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPL60R2K1C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPL60R2K1C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an

 7.1. Size:1618K  infineon
 ipl60r255p6.pdf pdf_icon

IPL60R2K1C6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R255P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R255P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1592K  infineon
 ipl60r299cp.pdf pdf_icon

IPL60R2K1C6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R299CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely

 7.3. Size:1607K  infineon
 ipl60r210p6.pdf pdf_icon

IPL60R2K1C6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R210P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R210P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

MOSTRAR MÁS

Otros transistores... IPL65R195C7, IPL65R190E6, IPL65R165CFD, IPL65R130C7, IPL65R099C7, IPL65R070C7, IPL60R650P6S, IPL60R360P6S, 18N50, IPL60R255P6, IPL60R210P6, IPL60R1K5C6S, IPL60R180P6, IPI80N06S3-07, IPI65R420CFD, IPI65R310CFD, IPI65R280E6