All MOSFET. IPL60R2K1C6S Datasheet

 

IPL60R2K1C6S Datasheet and Replacement


   Type Designator: IPL60R2K1C6S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: THINPAK5X6
 

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IPL60R2K1C6S Datasheet (PDF)

 ..1. Size:1321K  infineon
ipl60r2k1c6s.pdf pdf_icon

IPL60R2K1C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPL60R2K1C6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C6 Power TransistorIPL60R2K1C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 7.1. Size:1618K  infineon
ipl60r255p6.pdf pdf_icon

IPL60R2K1C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R255P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R255P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1592K  infineon
ipl60r299cp.pdf pdf_icon

IPL60R2K1C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R299CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R299CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

 7.3. Size:1607K  infineon
ipl60r210p6.pdf pdf_icon

IPL60R2K1C6S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R210P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R210P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

Datasheet: IPL65R195C7 , IPL65R190E6 , IPL65R165CFD , IPL65R130C7 , IPL65R099C7 , IPL65R070C7 , IPL60R650P6S , IPL60R360P6S , 75N75 , IPL60R255P6 , IPL60R210P6 , IPL60R1K5C6S , IPL60R180P6 , IPI80N06S3-07 , IPI65R420CFD , IPI65R310CFD , IPI65R280E6 .

History: IPP037N08N3 | NCEP045N10F

Keywords - IPL60R2K1C6S MOSFET datasheet

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