IPL60R2K1C6S Specs and Replacement
Type Designator: IPL60R2K1C6S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 12 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: THINPAK5X6
IPL60R2K1C6S substitution
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IPL60R2K1C6S datasheet
ipl60r2k1c6s.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPL60R2K1C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPL60R2K1C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an... See More ⇒
ipl60r255p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R255P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R255P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒
ipl60r299cp.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R299CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely... See More ⇒
ipl60r210p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R210P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R210P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒
Detailed specifications: IPL65R195C7, IPL65R190E6, IPL65R165CFD, IPL65R130C7, IPL65R099C7, IPL65R070C7, IPL60R650P6S, IPL60R360P6S, 18N50, IPL60R255P6, IPL60R210P6, IPL60R1K5C6S, IPL60R180P6, IPI80N06S3-07, IPI65R420CFD, IPI65R310CFD, IPI65R280E6
Keywords - IPL60R2K1C6S MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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